Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service.

Description:

The CZT5551 is a NPN bipolar (BJT) transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

Features:

● Type: NPN bipolar transistor
● V_CEO: 160V
● I_C: 600mA
● Power Dissipation (P_C): 1.5W
● Low Leakage Current (I_cbo): 50nA
● Low Saturation Voltage (V_CE(sat)): 200mV @ 50mA, 5mA
● High Current Gain (h_FE): 80 @ 5V, 1mA
● Transition Frequency (f_T): 100MHz

Applications

● High voltage amplifier applications.

Quick reference data

Symbol	Parameter	Conditions	Max	Unit
V_CEO	collector-emitter voltage	open base	160	V
I_C	collector current		0.6	A
V_CEsat	collector-emitter saturation voltage	I_C = 50mA; I_B= 5mA	0.2	V