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S9013 NPN Bipolar Transistor SOT-23 S9013 NPN Bipolar Transistor SOT-23 S9013 NPN Bipolar Transistor SOT-23
S9013 NPN Bipolar Transistor SOT-23
VCEO(V):25V
IC(A):200mA
PD(W):300mW
VCE(sat)(V):0.6V
fT(MHz):150MHz
Package:SOT-23

Product Details

Our advantages

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China.  As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 


Description

S9013 25 V, 200 mA NPN Transistors in a small SOT-23 Surface-Mounted Device (SMD) plastic package.

Features

● High Collector Current.(lc=500mA)

● Complementary To S 9012.

● Excellent HFE Linearity.

● Power dissipation.(Pc=300mW)


Applications

● High Collector Current.

Quick reference data

Symbol Parameter Conditions Max Unit
VCEO collector-emitter voltage open base 25 V
IC collector current 0.2 A
VCEsat collector-emitter
saturation voltage
IC = 500mA; IB = 50mA 0.6 V


S9013_00.jpg


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