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SLESD11D5.0CT5G Ultra Low Capacitance TSD/ESD Diodes DFN0603-2L

VRWM (max): 5V

VBR(min): 6V

IR(max): 0.1μA

VC(max): 7.5V

Package: DFN0603-2L

Product Details

Our advantages 

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

The SLESD11D5.0CT5G is a bi-directional TVSdiode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protect voltage sensitive data and power line. The SLESD11D5.0CT5G complies with the IEC 61000-4-2(ESD) standard with ±15 kV air and ±8 kV contact discharge. It is assembled into an ultra-small 0.6x0.3x0.3mm lead-free 0201 package. The small ZSLESD11D5.0CT5G an ideal choice to protect cell phone, digital cameras, audio players and many other portable applications.


Features

● Ultra small package: 0.6x0.3x0.3mm

● Ultra low capacitance: 15pF typical 

● Ultra low leakage: nA level 

● Low operating voltage: 5V 

● Low clamping voltage

● 2-pin leadless package 

● Complies with following standards:

● - IEC 61000-4-2 (ESD) immunity test 

● Air discharge: ±15kV 

● Contact discharge: ±8kV 

● These are Pb−Free Devices 

● Response Time is Typically < 1 ns


Applications

● Cellular Handsets and Accessories 

● Personal Digital Assistants 

● Notebooks and Handhelds 

● Portable Instrumentation 

● Digital Cameras 

● Peripherals 

● Audio Players 

● Keypads, Side Keys, LCD Displays

                              SLESD11D5.0CT5G_0.jpg

Service hotline

+86 0755-83044319

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