+86 755-83044319

Products

/
/
/
/
SLESD5311N-2TR Bidirectional TVS Diodes DFN1006 SLESD5311N-2TR Bidirectional TVS Diodes DFN1006 SLESD5311N-2TR Bidirectional TVS Diodes DFN1006
SLESD5311N-2TR Bidirectional TVS Diodes DFN1006

VRWM (max): 5V

VBR(min): 6V
VBR(max): 9V

IR(max): 1µA

VC(max): 10V

Package: SMA

Product Details

Our advantages 

Chinese manufacturing processes have undergone years of iteration, resulting in mature and reliable technologies. Many international corporations opt for production outsourcing in China. As an electronic components manufacturer in China, our products can fully replace those of major international brands in 99% of applications without the need for testing verification. Our products boast high consistency in quality, reasonable pricing, ample inventory, flexible supply, short lead times, and professional after-sales service. 

Description

Our diode offers precise voltage control with a maximum VRWM of 5V, ensuring reliable performance in your circuits. With a breakdown voltage (VBR) range from 6V to 9V, it delivers stable operation across various conditions. The diode's low reverse leakage current (IR) of just 1µA enhances circuit efficiency and minimizes power loss. Encased in a compact DFN1006 package, it’s well-suited for space-constrained applications.


Features

● Glass Passivated Die Construction

● Uni- and Bi-Directional Versions Available

● Excellent Clamping Capability

● Fast Response Time

● Plastic Material: UL Flammability


Applications

Ideal for protecting sensitive electronics in automotive, consumer electronics, and industrial applications. Its SMA package allows for easy mounting and integration, making it suitable for high-density circuit designs requiring robust transient voltage suppression.

                              SLESD5311N-2TR_00.png

Service hotline

+86 0755-83044319

Hall Effect Sensor

Get product information

WeChat

WeChat